Degradation and breakdown of 0.9 nm EOT SiO2/ ALD HfO2/metal gate stacks under positive constant voltage stress

Degraeve, RobinRobinDegraeveKauerauf, ThomasThomasKaueraufCho, Moon JuMoon JuChoZahid, MohammedMohammedZahidRagnarsson, Lars-AkeLars-AkeRagnarssonBrunco, DavidDavidBruncoKaczer, BenBenKaczerRoussel, PhilippePhilippeRousselDe Gendt, StefanStefanDe GendtGroeseneken, GuidoGuidoGroeseneken2021-10-162021-10-162005-12https://imec-publications.be/handle/20.500.12860/10359Degradation and breakdown of 0.9 nm EOT SiO2/ ALD HfO2/metal gate stacks under positive constant voltage stressProceedings paper