Enhancement of GaN-based device robustness by means of in-situ SiN cap layer

Medjdoub, FaridFaridMedjdoubMarcon, DenisDenisMarconCheng, KaiKaiChengVan Hove, MarleenMarleenVan HoveLeys, MaartenMaartenLeysDecoutere, StefaanStefaanDecoutere2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17607Enhancement of GaN-based device robustness by means of in-situ SiN cap layerMeeting abstract