Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications

Posthuma, NielsNielsPosthumaYou, ShuzhenShuzhenYouStoffels, SteveSteveStoffelsLiang, HuHuLiangZhao, MingMingZhaoDecoutere, StefaanStefaanDecoutere2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/31558Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applicationsProceedings paperhttps://ieeexplore.ieee.org/document/8393634/