Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth

Murota, JunichiJunichiMurotaYamamoto, YuchiYuchiYamamotoCostina, IoanIoanCostinaTillack, BerndBerndTillackLe Thanh, VinVinLe ThanhLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-252021-10-252018-052162-8769https://imec-publications.be/handle/20.500.12860/31391Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growthJournal article10.1149/2.0071806jsshttp://jss.ecsdl.org/content/7/6/P305.short