Modeling Ar/Cl2/O2 and Ar/SiH4/O2 Inductively Coupled Plasmas used for anisotropic etching of silicon and deposition of SiOx

Tinck, StefanStefanTinckBogaerts, AnnemieAnnemieBogaertsBoullart, WernerWernerBoullart2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/18089Modeling Ar/Cl2/O2 and Ar/SiH4/O2 Inductively Coupled Plasmas used for anisotropic etching of silicon and deposition of SiOxProceedings paper