The impact of the gate oxide thickness reduction on the gate induced floating body effect in SOI nMOSFETs

Ghedini der Agopian, PaulaPaulaGhedini der AgopianMartino, J.A.J.A.MartinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12190The impact of the gate oxide thickness reduction on the gate induced floating body effect in SOI nMOSFETsProceedings paper