Grasser, T.T.GrasserO'Sullivan, BarryBarryO'SullivanKaczer, BenBenKaczerFranco, JacopoJacopoFrancoStampfer, B.B.StampferWaltl, M.M.Waltl2021-12-072021-11-022021-12-0720211541-7026WOS:000672563100093https://imec-publications.be/handle/20.500.12860/37691CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast StatesProceedings paper10.1109/IRPS46558.2021.9405184978-1-7281-6893-7WOS:000672563100093FIELD-EFFECT TRANSISTORSNBTI DEGRADATIONINSTABILITYPBTIRELIABILITYFRAMEWORKIMPACT