Shickova, AdelinaAdelinaShickovaVerheyen, PeterPeterVerheyenEneman, GeertGeertEnemanDegraeve, RobinRobinDegraeveSimoen, EddyEddySimoenFavia, PaolaPaolaFaviaKlenov, DmitriDmitriKlenovSan Andres, EnricoEnricoSan AndresKaczer, BenBenKaczerJurczak, GosiaGosiaJurczakAbsil, PhilippePhilippeAbsilMaes, HermanHermanMaesGroeseneken, GuidoGuidoGroeseneken2021-10-172021-10-1720080018-9383https://imec-publications.be/handle/20.500.12860/14465Reliability of strained-Si devices with post-oxide-deposition strain introductionJournal article