Temperature influence on basic analog parameters of stacked GAA nanosheet nMOSFETs with 4.7nm vertical distance between sheets

Pereira de Silva, VanessaVanessaPereira de SilvaFernandes Perina, WelderWelderFernandes PerinaMartino, Joao AJoao AMartinoAgopian, Paula GDPaula GDAgopianSimoen, EddyEddySimoenVeloso, AnabelaAnabelaVeloso2021-10-292021-10-292020https://imec-publications.be/handle/20.500.12860/35727Temperature influence on basic analog parameters of stacked GAA nanosheet nMOSFETs with 4.7nm vertical distance between sheetsProceedings paper