A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs

Ma, JigangJigangMaZhang, Wei DongWei DongZhangZhang, Jian FuJian FuZhangBenbakhti, BrahimBrahimBenbakhtiLi, ZhigangZhigangLiMitard, JeromeJeromeMitardArimura, HiroakiHiroakiArimura2021-10-232021-10-2320160018-9383https://imec-publications.be/handle/20.500.12860/26935A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETsJournal articlehttp://ieeexplore.ieee.org/document/7563816/