Accurate stoichiometric analysis of Al1 xGaxN/GaN structures using APT and the influence of laser, poles and zone lines

Morris, RichardRichardMorrisArnoldi, LaurentLaurentArnoldiCuduvally, RamyaRamyaCuduvallyMelkonyan, DavitDavitMelkonyanFleischmann, ClaudiaClaudiaFleischmannZhao, MingMingZhaoVandervorst, WilfriedWilfriedVandervorst2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29023Accurate stoichiometric analysis of Al1 xGaxN/GaN structures using APT and the influence of laser, poles and zone linesOral presentation