GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line

De Koninck, YannickYannickDe KoninckCaer, CharlesCharlesCaerYudistira, DiditDiditYudistiraBaryshnikova, MarinaMarinaBaryshnikovaSar, HuseyinHuseyinSarHsieh, Ping-YiPing-YiHsiehOezdemir, Cenk IbrahimCenk IbrahimOezdemirPatra, Saroj KantaSaroj KantaPatraKuznetsova, NadezdaNadezdaKuznetsovaColucci, DavideDavideColucciMilenin, AlexeyAlexeyMileninYimam, Andualem AliAndualem AliYimamMorthier, GeertGeertMorthierVan Thourhout, DriesDriesVan ThourhoutVerheyen, PeterPeterVerheyenPantouvaki, MariannaMariannaPantouvakiKunert, BernardetteBernardetteKunertVan Campenhout, JorisJorisVan Campenhout2025-01-122025-01-122025-JAN 20028-0836WOS:001390764000012https://imec-publications.be/handle/20.500.12860/45075GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot lineJournal article10.1038/s41586-024-08364-2WOS:001390764000012QUANTUM-DOT LASERSSELECTIVE-AREA GROWTHLOW DARK CURRENTSITEMPERATUREINTEGRATIONLINEWIDTHPHOTONICSMEDLINE:39743604