Impact of the Zn diffusion process at the source side of a InXGa1-XAs nTFET on the analog parameters down to 10 K

Bordallo, CaioCaioBordalloMartino, JoaoJoaoMartinoAgopian, PaulaPaulaAgopianAlian, AliRezaAliRezaAlianMols, YvesYvesMolsRooyackers, RitaRitaRooyackersVandooren, AnneAnneVandoorenVerhulst, AnneAnneVerhulstSimoen, EddyEddySimoenClaeys, CorCorClaeysCollaert, NadineNadineCollaert2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/27897Impact of the Zn diffusion process at the source side of a InXGa1-XAs nTFET on the analog parameters down to 10 KProceedings paperhttp://ieeexplore.ieee.org/document/8309256/