Impact of the gradient of the non-equilibrium point defect concentration on the dopant flux in silicon

Kol'dyaev, VictorVictorKol'dyaev2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/706Impact of the gradient of the non-equilibrium point defect concentration on the dopant flux in siliconProceedings paper