Plasma influence on the attenuation of line width roughness of EUV photoresist lines ranging from 40 to 22 nm half pitch

Altamirano Sanchez, EfrainEfrainAltamirano SanchezDe Schepper, PeterPeterDe SchepperHansen, TerjeTerjeHansenBoullart, WernerWernerBoullart2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/21966Plasma influence on the attenuation of line width roughness of EUV photoresist lines ranging from 40 to 22 nm half pitchOral presentation