Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs

Millesimo, M.M.MillesimoTallarico, A. N.A. N.TallaricoPosthuma, NielsNielsPosthumaBakeroot, BenoitBenoitBakerootBorga, MatteoMatteoBorgaDecoutere, StefaanStefaanDecoutere2022-02-242022-02-2420211530-4388WOS:000628910900008https://imec-publications.be/handle/20.500.12860/39129Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTsJournal article10.1109/TDMR.2020.3048274WOS:000628910900008CHIP ESD PROTECTIONHOLDING-VOLTAGESCR DEVICEDESIGN