Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI

Mitard, JeromeJeromeMitardShea, C.C.SheaDe Jaeger, BriceBriceDe JaegerPristera, AndreaAndreaPristeraWang, GangGangWangHoussa, MichelMichelHoussaEneman, GeertGeertEnemanHellings, GeertGeertHellingsWang, Wei-EWei-EWangLin, J.C.J.C.LinLeys, FrederikFrederikLeysLoo, RogerRogerLooWinderickx, GillisGillisWinderickxVrancken, EviEviVranckenStesmans, AndreAndreStesmansDe Meyer, KristinKristinDe MeyerCaymax, MattyMattyCaymaxPantisano, LuigiLuigiPantisanoMeuris, MarcMarcMeurisHeyns, MarcMarcHeyns2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15877Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STIProceedings paper