GR-noise characterization of Ge pFinFETs with STI first and STI last process

Oliveira, Alberto V.Alberto V.OliveiraSimoen, EddyEddySimoenMitard, JeromeJeromeMitardAgopian, Paula G.D.Paula G.D.AgopianMartino, Joao AJoao AMartinoLanger, RobertRobertLangerWitters, LiesbethLiesbethWittersCollaert, NadineNadineCollaertThean, AaronAaronTheanClaeys, CorCorClaeys2021-10-232021-10-2320160741-3106https://imec-publications.be/handle/20.500.12860/27093GR-noise characterization of Ge pFinFETs with STI first and STI last processJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7523933&refinements%3D4226070420%26filter%3DAND%28p_IS_Number%3A43579