Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors

Wang, WeiWeiWangXu, GuangweiGuangweiXuChowdhury, M. Delwar H.M. Delwar H.ChowdhuryWang, HongHongWangUm, Jae KwangJae KwangUmJi, ZhuoyuZhuoyuJiGao, NanNanGaoZong, ZhiweiZhiweiZongBi, ChongChongBiLu, CongyanCongyanLuLu, NianduanNianduanLuBanerjee, WritamWritamBanerjeeFeng, JiafengJiafengFengLi, LingLingLiKadashchuk, AndriyAndriyKadashchukJang, JinJinJangLiu, MingMingLiu2021-10-262021-10-2620181098-0121https://imec-publications.be/handle/20.500.12860/32248Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistorsJournal article10.1103/PhysRevB.98.245308