Shimura, YosukeYosukeShimuraTakeuchi, ShotaroShotaroTakeuchiVincent, BenjaminBenjaminVincentEneman, GeertGeertEnemanClarysse, TrudoTrudoClarysseVantomme, AndreAndreVantommeDekoster, JohanJohanDekosterCaymax, MattyMattyCaymaxLoo, RogerRogerLooNakatsuka, OsamuOsamuNakatsukaZaima, ShigeakiShigeakiZaima2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17978Heavily doping technology for strained Ge1-xSnx layersProceedings paper