Cost effective implementation of a 90 V RESURF P-type drain extended MOS in a 0.35 μm based smart power technology

Bakeroot, BenoitBenoitBakerootVermandel, MiguelMiguelVermandelMoens, P.P.MoensDoutreloigne, JanJanDoutreloigneBolognesi, D.D.Bolognesi2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/5984Cost effective implementation of a 90 V RESURF P-type drain extended MOS in a 0.35 μm based smart power technologyProceedings paper