Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal-oxide-semiconductor field-effect transistors

Lukyanchikova, N. B.N. B.LukyanchikovaPetrichuk, M. V.M. V.PetrichukGarbar, N. P.N. P.GarbarSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-012021-10-011998https://imec-publications.be/handle/20.500.12860/2742Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal-oxide-semiconductor field-effect transistorsJournal article