New-source-side breakdown mechanism in AlGaN/GaN insulated-Gate HEMTs

Bahl, SandeepSandeepBahlVan Hove, MarleenMarleenVan HoveKang, XuanwuXuanwuKangMarcon, DenisDenisMarconZahid, MohammedMohammedZahidDecoutere, StefaanStefaanDecoutere2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22013New-source-side breakdown mechanism in AlGaN/GaN insulated-Gate HEMTsProceedings paper