A new 2 isolated-bits/cell Flash memory device with self aligned split gate structure using ONO stacks for charge storage

Breuil, LaurentLaurentBreuilSchuler, FranzFranzSchulerHaspeslagh, LucLucHaspeslaghWellekens, DirkDirkWellekensDe Vos, JoeriJoeriDe VosLorenzini, MartinoMartinoLorenziniVan Houdt, JanJanVan Houdt2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7257A new 2 isolated-bits/cell Flash memory device with self aligned split gate structure using ONO stacks for charge storageProceedings paper