Physical model of GR noise observed under inversion conditions near the pSi/SiO2 interfaces in SIMOX submicron MOSFETs and its application for defect characterization

Lukyanchikova, N. B.N. B.LukyanchikovaPetrichuk, M. V.M. V.PetrichukGarbar, N. P.N. P.GarbarSimoen, EddyEddySimoenClaeys, C.C.Claeys2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/2002Physical model of GR noise observed under inversion conditions near the pSi/SiO2 interfaces in SIMOX submicron MOSFETs and its application for defect characterizationProceedings paper