Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C

Marcon, DenisDenisMarconVan Hove, MarleenMarleenVan HoveVisalli, DomenicaDomenicaVisalliDerluyn, JoffJoffDerluynDas, JoJoDasMedjdoub, FaridFaridMedjdoubDegroote, StefanStefanDegrooteLeys, MaartenMaartenLeysCheng, KaiKaiChengMertens, RobertRobertMertensGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-182021-10-1820100021-4922https://imec-publications.be/handle/20.500.12860/17573Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °CJournal articlehttp://jjap.ipap.jp/link?JJAP/49/04DF07/