Yu, HaoHaoYuElKashlan, RanaRanaElKashlanTsai, M. -C.M. -C.TsaiYang, Y.Y.YangGuenach, M.M.GuenachKuo, Ying-ChunYing-ChunKuoYadav, SachinSachinYadavO'Sullivan, BarryBarryO'SullivanRathi, AartiAartiRathiGupta, AmratanshAmratanshGuptaXiao, DongpingDongpingXiaoDesset, ClaudeClaudeDessetAlian, AliRezaAliRezaAlianPeralagu, UthayasankaranUthayasankaranPeralaguAfanasiev, ValeriValeriAfanasievWu, T. -L.T. -L.WuParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaert2026-04-232026-04-232025979-8-3315-0478-61541-7026https://imec-publications.be/handle/20.500.12860/59182In this work, we discuss whether a positive gate bias instability (Delta Vth) issue hampers a GaN MISHEMT in power amplifier (PA) applications. Two aspects are evaluated: (1) the safe gate modulation range of a GaN MISHEMT that is free of Delta Vth, and (2) the gate modulation range of a PA in linear operation. The analysis shows that the two ranges have a significant overlap, meaning that a linearly operating MISHEMT PA can be well designed to avoid the positive Delta Vth issue.engProceedings paper10.1109/IRPS48204.2025.10983812WOS:001546466200185