Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels

Chou, H.-YH.-YChouAfanas'ev, ValeriValeriAfanas'evHoussa, MichelMichelHoussaStesmans, AndreAndreStesmansVincent, BenjaminBenjaminVincentGencarelli, FedericaFedericaGencarelliShimura, YosukeYosukeShimuraMerckling, ClementClementMercklingLoo, RogerRogerLooNakatsuka, OsamuOsamuNakatsukaZaima, ShigeakiShigeakiZaima2021-10-222021-10-2220140003-6951https://imec-publications.be/handle/20.500.12860/23652Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channelsJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6821252&sortType%3Ddesc_p_Publication_Year%26queryText%3Dmercklin