A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes

Crupi, F.F.CrupiKaczer, BenBenKaczerDegraeve, RobinRobinDegraeveDe Keersgieter, AnAnDe KeersgieterGroeseneken, GuidoGuidoGroeseneken2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7366A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimesJournal article