N2 as alternative to H2 as carrier gas in CVD Si-epitaxy; double win-win situation

Meunier-Beillard, PhilippePhilippeMeunier-BeillardCaymax, MattyMattyCaymaxVan Hoeymissen, JanJanVan Hoeymissen2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7901N2 as alternative to H2 as carrier gas in CVD Si-epitaxy; double win-win situationOral presentation