Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy

Hsu, Po-ChunPo-ChunHsuSimoen, EddyEddySimoenLiang, HuHuLiangDe Jaeger, BriceBriceDe JaegerBakeroot, BenoitBenoitBakerootWellekens, DirkDirkWellekensDecoutere, StefaanStefaanDecoutere2022-03-032021-11-022022-03-0320211862-6300WOS:000679123300001https://imec-publications.be/handle/20.500.12860/37715Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient SpectroscopyJournal article10.1002/pssa.202100227WOS:000679123300001ALGAN/GANTRAPSHEMT