Tunnelling 1/fy noise in 5nm HfO2/2.1 nm SiO2 gate stack n-MOSFETs

Simoen, EddyEddySimoenMercha, AbdelkarimAbdelkarimMerchaPantisano, LuigiLuigiPantisanoClaeys, CorCorClaeysYoung, EdwardEdwardYoung2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9607Tunnelling 1/fy noise in 5nm HfO2/2.1 nm SiO2 gate stack n-MOSFETsProceedings paper