Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation

Rodrigues, M.M.RodriguesGaleti, M.M.GaletiMartino, J.A.J.A.MartinoCollaert, NadineNadineCollaertSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-192021-10-1920110038-1101https://imec-publications.be/handle/20.500.12860/19691Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operationJournal article