Trapping in GaN-based MIS-HEMTs: role of high drain bias and hot electrons

Meneghini, MatteoMatteoMeneghiniBisi, DavideDavideBisiMarcon, DenisDenisMarconStoffels, SteveSteveStoffelsVan Hove, MarleenMarleenVan HoveWu, Tian-LiTian-LiWuDecoutere, StefaanStefaanDecoutereMeneghesso, GaudioGaudioMeneghessoZanoni, EnricoEnricoZanoni2021-10-222021-10-2220140003-6951https://imec-publications.be/handle/20.500.12860/24241Trapping in GaN-based MIS-HEMTs: role of high drain bias and hot electronsJournal articlehttp://scitation.aip.org/content/aip/journal/apl/104/14/10.1063/1.4869680