Formation of CoSi2 on strained Si0.8Ge0.2 using a sacrificial Si layer

Alves Donaton, RicardoRicardoAlves DonatonKolodinski, SabineSabineKolodinskiCaymax, MattyMattyCaymaxRoussel, PhilippePhilippeRousselBender, HugoHugoBenderBrijs, BertBertBrijsMaex, KarenKarenMaex2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/632Formation of CoSi2 on strained Si0.8Ge0.2 using a sacrificial Si layerJournal article