Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon

Meneghini, MatteoMatteoMeneghiniBisi, DavideDavideBisiStoffels, SteveSteveStoffelsMarcon, DenisDenisMarconVan Hove, MarleenMarleenVan HoveWu, Tian-LiTian-LiWuDecoutere, StefaanStefaanDecoutereMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoni2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24242Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on siliconMeeting abstract