Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Meneghesso, GaudenzioGaudenzioMeneghessoMeneghini, MatteoMatteoMeneghiniBisi, DavideDavideBisiRossetto, IsabellaIsabellaRossettoWu, Tian-LiTian-LiWuVan Hove, MarleenMarleenVan HoveMarcon, DenisDenisMarconStoffels, SteveSteveStoffelsDecoutere, StefaanStefaanDecoutereZanoni, EnricoEnricoZanoni2021-10-232021-10-2320160026-2714https://imec-publications.be/handle/20.500.12860/26999Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gateJournal articlehttp://www.sciencedirect.com/science/article/pii/S0026271415302389