Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes

Mendes Bordallo, Ciao CesarCiao CesarMendes BordalloSivieri, Victor B.Victor B.SivieriMartino, Joao AntonioJoao AntonioMartinoAgopian, Paula G. D.Paula G. D.AgopianRooyackers, RitaRitaRooyackersVandooren, AnneAnneVandoorenSimoen, EddyEddySimoenThean, AaronAaronTheanClaeys, CorCorClaeys2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26998Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimesProceedings paper