N-2 as carrier gas: an alternative to H-2 for enhanced epitaxy of Si, SiGe and SiGe:C

Meunier-Beillard, PhilippePhilippeMeunier-BeillardCaymax, MattyMattyCaymaxVan Nieuwenhuysen, KrisKrisVan NieuwenhuysenDoumen, GeertGeertDoumenBrijs, BertBertBrijsHopstaken, M.M.HopstakenGeenen, LucLucGeenenVandervorst, WilfriedWilfriedVandervorst2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9299N-2 as carrier gas: an alternative to H-2 for enhanced epitaxy of Si, SiGe and SiGe:CJournal article