Simicic, MarkoMarkoSimicicWeckx, PieterPieterWeckxParvais, BertrandBertrandParvaisRoussel, PhilippePhilippeRousselKaczer, BenBenKaczerGielen, GeorgesGeorgesGielen2021-10-272021-10-2720191063-8210https://imec-publications.be/handle/20.500.12860/34004Advanced scaling and the introduction of new materials in the metal-oxide-semiconductor field-effect transistor (MOSFET) raise concerns about its reliability. Several degradation mechanisms, depending on operating conditions and time, can cause a significant change of the transistor parameters. The transistor area plays a large role when it comes to aging. In large-area MOSFETs, aging appears deterministic, while in small-area devices it is stochastic and convoluted with random telegraph noise. This is analogous to the time-zero random variability, which also reduces as the transistor gate area increases. The scope of this paper is to extend the knowledge of the time-dependent random variability as a function of MOSFET gate area scaling. The goal is to aid the designers in transistor sizing toward a more reliable design. As an example, the impact of time-dependent random variability is illustrated for an analog-to-digital converter.Journal article10.1109/tvlsi.2018.2878841https://ieeexplore.ieee.org/document/8556027