Molecular beam deposition of Gd2O3 films on GeO2/Ge passivated III-V compound substrates (GaAs, In0.15Ga0.85As) prepared by atomic hydrogen cleaning

Molle, AlessandroAlessandroMolleSpiga, SabinaSabinaSpigaAndreozzi, AndreaAndreaAndreozziFanciulli, MarcoMarcoFanciulliBrammertz, GuyGuyBrammertzMeuris, MarcMarcMeuris2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15885Molecular beam deposition of Gd2O3 films on GeO2/Ge passivated III-V compound substrates (GaAs, In0.15Ga0.85As) prepared by atomic hydrogen cleaningOral presentation