Quantum simulation of C-V and I-V characteristics in Ge and III-V materials/High-k MOS devices

Moreau, MathieuMathieuMoreauMunteanu, DanielaDanielaMunteanuAutran, Jean-LucJean-LucAutranBellenger, FlorenceFlorenceBellengerMitard, JeromeJeromeMitardHoussa, MichelMichelHoussa2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15890Quantum simulation of C-V and I-V characteristics in Ge and III-V materials/High-k MOS devicesProceedings paper