Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

Mukherjee, KalparupaKalparupaMukherjeeDe Santi, CarloCarloDe SantiMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoniMeneghini, MatteoMatteoMeneghiniYou, ShuzhenShuzhenYouGeens, KarenKarenGeensBorga, MatteoMatteoBorgaBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutere2022-01-252021-11-022022-01-252022-01-2520201541-7026WOS:000612717200095https://imec-publications.be/handle/20.500.12860/38220Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical TransistorsProceedings paper978-1-7281-3199-3WOS:000612717200095