On the origin of the two-dimensional electron gas at AlGaN/GaN at AlGaN/GaN heterojunctions and its influence on gate-recessed MISHEMTs

Bakeroot, BenoitBenoitBakerootYou, ShuzhenShuzhenYouWu, Tian-LiTian-LiWuHu, JieJieHuVan Hove, MarleenMarleenVan HoveDe Jaeger, BriceBriceDe JaegerGeens, KarenKarenGeensStoffels, SteveSteveStoffelsDecoutere, StefaanStefaanDecoutere2021-10-222021-10-2220140021-8979https://imec-publications.be/handle/20.500.12860/23513On the origin of the two-dimensional electron gas at AlGaN/GaN at AlGaN/GaN heterojunctions and its influence on gate-recessed MISHEMTs - A TCAD studyJournal articlehttp://scitation.aip.org/content/aip/journal/jap/116/13/10.1063/1.4896900