AVD and MOCVD TaCN-based films for gate metal applications on high-k gate dielectrics

Karim, ZiaZiaKarimBarbar, GhassanGhassanBarbarBoissiere, OlivierOlivierBoissiereLehnen, PeerPeerLehnenLohe, ChristophChristophLoheSeidel, TomTomSeidelAdelmann, ChristophChristophAdelmannConard, ThierryThierryConardO'Sullivan, BarryBarryO'SullivanRagnarsson, Lars-AkeLars-AkeRagnarssonSchram, TomTomSchramVan Elshocht, SvenSvenVan ElshochtDe Gendt, StefanStefanDe Gendt2021-10-162021-10-162007-10https://imec-publications.be/handle/20.500.12860/12386AVD and MOCVD TaCN-based films for gate metal applications on high-k gate dielectricsProceedings paperhttp://www.ecsdl.org/vsearch/servlet/VerityServlet?KEY=ECSTF8&smode=strresults&sort=rel&maxdisp=25&threshold=0&pjournals=ECSTF8&