Growth of InN on Ge(111) by molecular beam Epitaxy using a GaN buffer

Lieten, RubenRubenLietenDegroote, StefanStefanDegrooteKuijk, MaartenMaartenKuijkBorghs, GustaafGustaafBorghs2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12488Growth of InN on Ge(111) by molecular beam Epitaxy using a GaN bufferOral presentationhttp://www.emrs-strasbourg.com/files/pdf/symposium_f.pdf