Record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

Arimura, HiroakiHiroakiArimuraCott, DaireDaireCottBoccardi, GuillaumeGuillaumeBoccardiLoo, RogerRogerLooWostyn, KurtKurtWostynWitters, LiesbethLiesbethWittersConard, ThierryThierryConardSuhard, SamuelSamuelSuhardvan Dorp, DennisDennisvan DorpDekkers, HaroldHaroldDekkersRagnarsson, Lars-AkeLars-AkeRagnarssonMitard, JeromeJeromeMitardDe Heyn, VincentVincentDe HeynMocuta, DanDanMocutaCollaert, NadineNadineCollaertHoriguchi, NaotoNaotoHoriguchi2021-10-272021-10-2720190018-9383https://imec-publications.be/handle/20.500.12860/32453Record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparationJournal articlehttps://ieeexplore.ieee.org/document/8897623