Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs

Franco, JacopoJacopoFrancoKaczer, BenBenKaczerVais, AbhitoshAbhitoshVaisAlian, AliRezaAliRezaAlianArimura, HiroakiHiroakiArimuraPutcha, VamsiVamsiPutchaSioncke, SonjaSonjaSionckeWaldron, NiamhNiamhWaldronZhou, DaisyDaisyZhouNyns, LauraLauraNynsMitard, JeromeJeromeMitardHeyns, MarcMarcHeynsGroeseneken, GuidoGuidoGroesenekenCollaert, NadineNadineCollaertLinten, DimitriDimitriLintenThean, AaronAaronThean2021-10-232021-10-2320162059-8521https://imec-publications.be/handle/20.500.12860/26630Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAsJournal articlehttps://www.cambridge.org/core/journals/mrs-advances/article/div-classtitlefromPage=online&aid=10333231&fileId=S205985211600387X