Afzalian, AryanAryanAfzalian2026-09-142026-09-142025979-8-3315-4884-1https://imec-publications.be/handle/20.500.12860/60339Using accurate Hybrid-Functional DFT coupled with the Non-Equilibrium Green's function (NEGF) formalism, we explore and benchmark the fundamental scaling limits of CNT-FETs against Si and 2D-material MoS2 and HfS2 Nanosheets, highlighting their potential for gate length (L) and supply voltage (VDD) scaling down to 5 nm and to 0.5 V, respectively. The highest drive current is achieved by CNTFETs with sub 1.3 nm diameters down to L=9 nm and using Vdd in the 0.45-0.5V range. Below L=9nm, however, the HfS2 NS offers the best drive and could further scale down to L=5 nm with a reduced VDD of 0.5 V.engProceedings paper10.1109/sispad66650.2025.11186378WOS:001846246700078