Replacement metal gate/high-k last technology for aggressively scaled planar and FinFET-based devices

Veloso, AnabelaAnabelaVelosoLee, Jae WooJae WooLeeSimoen, EddyEddySimoenRagnarsson, Lars-AkeLars-AkeRagnarssonArimura, HiroakiHiroakiArimuraCho, Moon JuMoon JuChoBoccardi, GuillaumeGuillaumeBoccardiThean, AaronAaronTheanHoriguchi, NaotoNaotoHoriguchi2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24753Replacement metal gate/high-k last technology for aggressively scaled planar and FinFET-based devicesProceedings paperhttp://ecst.ecsdl.org/content/61/2/225.abstract